Development of OCTOPUS pixel detector – Monolithic Silicon Pixel Detectors for Future Colliders

Program PHD
Supervisor specialist
Annotation

Polovodičové detektory v HEP

The topic of the dissertation is the study of the performance of monolithic active pixel sensors (MAPS) [1] developed in the TPSCo65 CMOS imaging process, aimed at fulfilling the vertex detector requirements for next-generation lepton colliders, as outlined in the ECFA detector roadmap. These detectors include both the sensor and electronics components integrated within a single silicon structure. A major focus will be on the evaluation of its' spatial performance under controlled laboratory conditions and particle beams, using advanced readout systems such as Caribou [2]. The project is embedded in an international collaboration of twelve institutes, including CERN and DESY, providing opportunities to contribute to a broad spectrum of R&D activities. These range from sensor design, TCAD and device-level simulations, and prototype characterization in laboratory setups, to beam test campaigns at accelerator facilities. Particular attention will be paid to correlating experimental results with detailed simulations performed with frameworks such as Allpix-Squared [3] and testbeam evaluation using Corryvreckan [4], enabling insights into charge transport and efficiency.

Building on the development of prototype detectors like DPTS [5] and H2M [6], the work will target final detector specifications including a single-point resolution of approximately 3 μm, time resolutions reaching 5 ns for high-energy applications, power consumptions below 50 mW/cm², and thinning processes to 50 μm or less. Intermediate testing goals, such as the development of high-resolution sensors for beam telescopes at DESY and CERN, will also be pursued, where relaxed requirements (e.g., <500 mW/cm², ~100 ns timing) offer a stepwise path toward full specification achievement.